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Within this work we study the plasma-assisted molecular beam epitaxy of GaN on Si(111) substrate at different substrate temperatures and III/V flux ratios. We present the model, which gives the… Click to show full abstract
Within this work we study the plasma-assisted molecular beam epitaxy of GaN on Si(111) substrate at different substrate temperatures and III/V flux ratios. We present the model, which gives the analytical expressions for the boundaries between the three growth modes: compact layer, nanowires, and absence of growth. We extract the activation energy for nucleation of GaN nanowires on the Si(111) from the model fitting to experimental data.
Keywords:
gan plasma;
assisted mbe;
plasma assisted;
growth modes;
growth;
modes gan
Journal Title: Semiconductors
Year Published: 2018
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Journal Title: Semiconductors
Year Published: 2018
Link to full text (if available)
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recommendations!