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Two different approaches for the etching of the gallium nitride epitaxial layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy have been elaborated. It is demonstrated that anisotropic etch… Click to show full abstract
Two different approaches for the etching of the gallium nitride epitaxial layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy have been elaborated. It is demonstrated that anisotropic etch profiles can be achieved by both photoenhanced wet chemical etching and reactive plasma-chemical etching methods. Moreover, it is shown, that the photoenhanced wet chemical etching allows to remove GaN layer without damaging silicon substrate.
Keywords:
epitaxial structures;
111 epitaxial;
chemical etching;
structures mems;
processing gan;
gan 111
Journal Title: Semiconductors
Year Published: 2018
Link to full text (if available)
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Journal Title: Semiconductors
Year Published: 2018
Link to full text (if available)
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recommendations!