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The influence of the of the pore structure on the electron barrier height of Au–Al2O3 structures is experimentally studied. The porous structures of anodic aluminum oxide of two types with… Click to show full abstract
The influence of the of the pore structure on the electron barrier height of Au–Al2O3 structures is experimentally studied. The porous structures of anodic aluminum oxide of two types with through pores and pores in the form of a well are investigated. It is shown that, depending on the shape of the pore profile, the deposited thin gold film creates a different height of the electron barrier at the metal-insulator interface. The method of linear optical spectroscopy showed that the height of the barrier for structures with through pores is higher by 2.0 eV.
Journal Title: Semiconductors
Year Published: 2018
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