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The formation features of a low-temperature Ta/Al-based ohmic contact to Al0.25Ga0.75N/GaN heteroepitaxial structures on silicon substrates are studied. The fabricated ohmic contacts based on Ta/Al/Ti (10/300/20 nm) compositions have a… Click to show full abstract
The formation features of a low-temperature Ta/Al-based ohmic contact to Al0.25Ga0.75N/GaN heteroepitaxial structures on silicon substrates are studied. The fabricated ohmic contacts based on Ta/Al/Ti (10/300/20 nm) compositions have a low contact resistance (0.4 Ω mm) and smooth surface morphology of the contact area and its edge after 60-s annealing at T = 550°C in a nitrogen atmosphere.
Keywords:
low temperature;
heteroepitaxial structures;
temperature based;
structures silicon;
based ohmic;
gan heteroepitaxial
Journal Title: Semiconductors
Year Published: 2019
Link to full text (if available)
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Journal Title: Semiconductors
Year Published: 2019
Link to full text (if available)
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recommendations!