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Type-I indirect-gap heterostructures are convenient objects for studying the spin dynamics of localized excitons, which are difficult to investigate in heterostructures of other types. It is shown that structures with… Click to show full abstract
Type-I indirect-gap heterostructures are convenient objects for studying the spin dynamics of localized excitons, which are difficult to investigate in heterostructures of other types. It is shown that structures with such an energy spectrum can be formed from III–V binary compounds on substrates with the (110) orientation. The effect of the strain distribution and conduction-band structure in quasimomentum space on the energy spectrum of electronic states in the heterostructures is discussed.
Keywords:
indirect gap;
gap semiconductor;
type indirect;
semiconductor heterostructures;
heterostructures 110
Journal Title: Semiconductors
Year Published: 2019
Link to full text (if available)
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Journal Title: Semiconductors
Year Published: 2019
Link to full text (if available)
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recommendations!