LAUSR

The results of an investigation into the thermoelectric power of thin block Bi1 –xSbx films (0 ≤ x ≤ 0.15) 100–1000 nm in thickness on mica and polyimide substrates in the temperature range of 77–300 K are presented. When measuring the thermoelectric power, a method excluding strain distortion in the film–substrate system is used. The structure, temperature dependences of the thermoelectric power, and resistivity of thin films are analyzed, and the power factor is estimated. A difference in the character of the temperature dependences of the thermoelectric power and resistivity of the films on mica and polyimide substrates is found. This difference is explained by a variation in the band structure parameters under the effect of strain appearing in the film–substrate system due to a difference in the thermal expansion of the film and substrate materials.