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The currents flowing in metal–CaF2–n-Si and metal–SiO2–CaF2–n-Si structures with the same (about 1.5 nm) fluoride thickness are compared in the reverse-bias mode. It is revealed that the current in the… Click to show full abstract
The currents flowing in metal–CaF2–n-Si and metal–SiO2–CaF2–n-Si structures with the same (about 1.5 nm) fluoride thickness are compared in the reverse-bias mode. It is revealed that the current in the case of a two-layer dielectric can be notably higher within a certain voltage range. Such unexpected behavior is associated with the coexistence of both electron and hole components of the current as well as with the configuration of the SiO2–CaF2 barrier through which tunneling occurs. The results of measurements and explanatory simulation data are presented.
Journal Title: Semiconductors
Year Published: 2019
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