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This paper presents the results of the study the transport properties of the SOI-based structure. Measurements were carried out on an alternating current with an external magnetic field in a… Click to show full abstract
This paper presents the results of the study the transport properties of the SOI-based structure. Measurements were carried out on an alternating current with an external magnetic field in a wide temperature range. The influence of the magnetic field was found. We associate this effect with the influence on the surface states located at the interface, this appears as a change of the energy of their levels. This effect is enhanced by the nanoscale of the silicon channel.
Keywords:
effect soi;
soi based;
magnetoimpedance effect;
effect;
based structure
Journal Title: Semiconductors
Year Published: 2019
Link to full text (if available)
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Journal Title: Semiconductors
Year Published: 2019
Link to full text (if available)
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recommendations!