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Abstract The results of studying the structure and processes of dielectric relaxation in thin layers of Ge–Sb–Te are presented. The found permittivity dispersion and occurrence of dielectric-loss maxima in the… Click to show full abstract
Abstract The results of studying the structure and processes of dielectric relaxation in thin layers of Ge–Sb–Te are presented. The found permittivity dispersion and occurrence of dielectric-loss maxima in the low-frequency region are explained by the structural features of the compounds under study.
Keywords:
structural dielectric;
thin amorphous;
amorphous layers;
dielectric study;
layers system;
study thin
Journal Title: Semiconductors
Year Published: 2020
Link to full text (if available)
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Journal Title: Semiconductors
Year Published: 2020
Link to full text (if available)
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recommendations!