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Abstract A model of a heterostructure consisting of a silicon-carbide single layer formed on a massive silicon substrate is proposed. The problem of the adsorption of alkali metal atoms and… Click to show full abstract
Abstract A model of a heterostructure consisting of a silicon-carbide single layer formed on a massive silicon substrate is proposed. The problem of the adsorption of alkali metal atoms and halogen atoms on the carbon and silicon surface atoms of a 2D SiC/Si heterostructure is considered. Analytical estimates for charge transfer and the adsorption energy are reported.
Keywords:
states adsorbability;
sic structure;
electron states;
structure electron
Journal Title: Semiconductors
Year Published: 2020
Link to full text (if available)
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Journal Title: Semiconductors
Year Published: 2020
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!