Three-layer SrRuO3/SrTiO3/SrRuO3 heterostructures were grown by laser evaporation on (110)LaAlO3 substrates. Photolithography and ion etching are used to form plane-parallel film capacitors, in which a layer of strontium titanate is… Click to show full abstract
Three-layer SrRuO3/SrTiO3/SrRuO3 heterostructures were grown by laser evaporation on (110)LaAlO3 substrates. Photolithography and ion etching are used to form plane-parallel film capacitors, in which a layer of strontium titanate is placed between two film electrodes of strontium ruthenate. Data on the structure and orientation of the intermediate SrTiO3 layer in the grown heterostructures were obtained. The variation of the dielectric constant and dielectric loss of the SrTiO3 intermediate layer upon varying the temperature and intensity of an external electric field was studied.
Journal Title: Physics of the Solid State
Year Published: 2019
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