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Conductivity of Manganite Films under the Action of Tension Caused by the Deformation of Substrate

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The electron transport properties of strained thin La0.7Ba0.3MnO3 (LBMO) epitaxial films are studied. Films 40–100 nm in thickness were prepared by laser ablation at a temperature T = 700–800°C in… Click to show full abstract

The electron transport properties of strained thin La0.7Ba0.3MnO3 (LBMO) epitaxial films are studied. Films 40–100 nm in thickness were prepared by laser ablation at a temperature T = 700–800°C in pure oxygen atmosphere of 0.3–1 mBar. Ferroelectric crystal substrates (011)0.79PbMg1/3Nb2/3O3–0.21-PbTiO3 (PMN–PT) with a Curie temperature of 150°C and high piezoelectric constants were used to create a mechanical stress. The ferroelectric polarization and piezoelectric effects on the electrical parameters of LBMO films are studied.

Keywords: films action; action tension; tension caused; manganite films; conductivity manganite; caused deformation

Journal Title: Physics of the Solid State
Year Published: 2019

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