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Photosensitivity of the negative magnetoresistance (NMR) of silicon containing magnetic nanoclusters of manganese atoms is revealed under background and IR (up to λ = 3 μm) irradiation at room temperature.… Click to show full abstract
Photosensitivity of the negative magnetoresistance (NMR) of silicon containing magnetic nanoclusters of manganese atoms is revealed under background and IR (up to λ = 3 μm) irradiation at room temperature. It is shown that irradiation leads to a significant decrease in the NMR (NMR suppression) and sign inversion of the NMR at higher radiation intensities. Regularities of variations in the NMR and conditions for sign inversion are determined.
Keywords:
atoms new;
new ferromagnetic;
magnetic nanoclusters;
silicon magnetic;
nanoclusters manganese;
manganese atoms
Journal Title: Technical Physics
Year Published: 2019
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Journal Title: Technical Physics
Year Published: 2019
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!