Photo from archive.org
We propose a backward-diode heterostructure modified by a built-in acceptor-doped layer that forms an additional potential barrier decreasing the transverse transport of hot electrons to the substrate. According to calculations,… Click to show full abstract
We propose a backward-diode heterostructure modified by a built-in acceptor-doped layer that forms an additional potential barrier decreasing the transverse transport of hot electrons to the substrate. According to calculations, this structure is characterized by (i) an energy difference between dimensional quantization levels that is several times the optical phonon energy in GaAs and (ii) increased linearity of transfer characteristics.
Keywords:
dimensional electron;
electron gas;
gas donor;
two dimensional;
acceptor;
acceptor doped
Journal Title: Technical Physics Letters
Year Published: 2017
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!
Journal Title: Technical Physics Letters
Year Published: 2017
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!