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The emission directionality of self-catalytic GaAs nanowires in an AlGaAs shell, produced by molecular-beam epitaxy with a varied level of beryllium doping, is studied. It is shown that an undoped… Click to show full abstract
The emission directionality of self-catalytic GaAs nanowires in an AlGaAs shell, produced by molecular-beam epitaxy with a varied level of beryllium doping, is studied. It is shown that an undoped sample possesses pronounced waveguide properties along the growth direction. With increasing doping level, the intensity of the emission directed perpendicular to the lateral nanowire walls grows.
Keywords:
emission;
beryllium doped;
emission beryllium;
directional emission;
doped gaas;
beryllium
Journal Title: Technical Physics Letters
Year Published: 2017
Link to full text (if available)
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Journal Title: Technical Physics Letters
Year Published: 2017
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!