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High-quality heteroepitaxial (0001)ZnO:Te/(0001)GaN/(0001)Al2O3 structures have been grown by hydrogen vapor-phase epitaxy in a low-pressure continuous flow reactor. X-ray diffraction analysis of these heterostructures has been carried out, which revealed the… Click to show full abstract
High-quality heteroepitaxial (0001)ZnO:Te/(0001)GaN/(0001)Al2O3 structures have been grown by hydrogen vapor-phase epitaxy in a low-pressure continuous flow reactor. X-ray diffraction analysis of these heterostructures has been carried out, which revealed the high structural quality of thin zinc oxide layers. The surface morphology and specific features of UV photoluminescence of the ZnO/GaN/Al2O3 heterostructure have been analyzed.
Keywords:
gan al2o3;
luminescence zno;
features luminescence;
zno gan;
specific features
Journal Title: Technical Physics Letters
Year Published: 2018
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Journal Title: Technical Physics Letters
Year Published: 2018
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!