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The current–voltage characteristics of light-emitting diodes based on InGaAs/GaAs heterostructures with an injector made of (In, Fe)Sb diluted magnetic semiconductor are studied. The current–voltage characteristics of the (In, Fe)Sb/n-GaAs and… Click to show full abstract
The current–voltage characteristics of light-emitting diodes based on InGaAs/GaAs heterostructures with an injector made of (In, Fe)Sb diluted magnetic semiconductor are studied. The current–voltage characteristics of the (In, Fe)Sb/n-GaAs and (In, Fe)Sb/p-GaAs structures are analyzed. The band diagrams of heterojunctions are constructed. It is shown that the investigated structures have the same current transfer mechanism as in the structures with a Schottky barrier.
Keywords:
magnetic heterojunctions;
structures based;
diode structures;
based gaas;
gaas magnetic
Journal Title: Technical Physics Letters
Year Published: 2019
Link to full text (if available)
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Journal Title: Technical Physics Letters
Year Published: 2019
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!