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Injection microlasers with an active region based on arrays of InGaAs/GaAs quantum well-dots, formed by deep etching, have been studied. The manner in which the current–voltage characteristic changes when the… Click to show full abstract
Injection microlasers with an active region based on arrays of InGaAs/GaAs quantum well-dots, formed by deep etching, have been studied. The manner in which the current–voltage characteristic changes when the diameter microlaser is reduced shows that a nonelectrically conducting layer with thickness of about 1.5 μm is formed near the side surface, which leads to a decrease in the effective current flow area.
Keywords:
gaas quantum;
voltage characteristic;
well dots;
ingaas gaas;
quantum well;
current voltage
Journal Title: Technical Physics Letters
Year Published: 2019
Link to full text (if available)
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Journal Title: Technical Physics Letters
Year Published: 2019
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!