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Abstract The adsorption of barium atoms on C and Si faces of 3 C -, 6 H -, and 4 H -SiC polytypes is examined using the Haldane–Anderson model. The… Click to show full abstract
Abstract The adsorption of barium atoms on C and Si faces of 3 C -, 6 H -, and 4 H -SiC polytypes is examined using the Haldane–Anderson model. The charge transfer from a barium adatom to the substrate is analyzed with band and local states of the adsorption system taken into account. The ionic and metallic contributions to the adsorption energy are estimated. The surface molecule model is used to verify some of the results.
Keywords:
silicon carbide;
adsorption barium;
barium atoms;
barium;
atoms silicon
Journal Title: Technical Physics Letters
Year Published: 2020
Link to full text (if available)
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Journal Title: Technical Physics Letters
Year Published: 2020
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!