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Experimental and Theoretical Examination of the Photosensitivity Spectra of Structures with In0.4Ga0.6As Quantum Well-Dots of the Optical Range (900–1050 nm)

Solar cells based on a new type of nanostructure (quantum well-dots) have been studied. These quantum well-dots (QWDs) are In0.4Ga0.6As layers with marked composition and thickness modulations. The energies of… Click to show full abstract

Solar cells based on a new type of nanostructure (quantum well-dots) have been studied. These quantum well-dots (QWDs) are In0.4Ga0.6As layers with marked composition and thickness modulations. The energies of the observed optical transitions in QWDs turn out to be close to the energies of transitions involving a light hole and a heavy one in a two-dimensional quantum well of the same nominal thickness and composition. The ground-state peak is characterized by strong TE polarization (>70%), while the shorter-wavelength peak is almost unpolarized (<10%).

Keywords: quantum; 4ga0 6as; well dots; in0 4ga0; experimental theoretical; quantum well

Journal Title: Technical Physics Letters
Year Published: 2020

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