LAUSR

The effect of UV radiation and a strong electric field on the current–voltage characteristics of resistive structures based on polymorphic gallium oxide (Ga2O3) films is discussed. Ga2O3 films were deposited by the method of halide vapor phase epitaxy (HVPE) on smooth and patterned sapphire substrates with a baseline orientation (0001). α-Ga2O3 films grow on smooth substrates, and gallium oxide films containing α and e phases grow on patterned ones. A switching effect was detected in the metal/Ga2O3/metal structures based on two-phase films. When exposed to radiation with λ = 254 nm and a strong electric field, the structures pass from a low resistive state to a high resistive state.