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Si nanophases and nanolayers were obtained by bombardment with Ar+ ions followed by annealing at various depths of silicon oxide. As ion energy E0 varies from 10 to 25 keV,… Click to show full abstract
Si nanophases and nanolayers were obtained by bombardment with Ar+ ions followed by annealing at various depths of silicon oxide. As ion energy E0 varies from 10 to 25 keV, the average depth of Si nanophase formation varies from 15 to 25 nm. It is shown that, as the sizes of Si nanophases vary from ~10 to 25 nm, band gap Eg decreases from 1.9 to 1.5 eV. For Si nanolayers, Eg is ~1.1–1.2 eV.
Keywords:
crystal structure;
structure band;
band gap;
various depths
Journal Title: Technical Physics Letters
Year Published: 2020
Link to full text (if available)
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Journal Title: Technical Physics Letters
Year Published: 2020
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!