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Photoelectric characteristics of a 320 × 256-element focal plane array (FPA) with a pitch of 30 μm, whose photosensitive element is formed in the InSb epitaxial layer deposited on a… Click to show full abstract
Photoelectric characteristics of a 320 × 256-element focal plane array (FPA) with a pitch of 30 μm, whose photosensitive element is formed in the InSb epitaxial layer deposited on a heavily doped substrate, have been investigated. For a relative aperture of 1: 0.94 and an integration time of 1.46 ms, the mean value of the noise-equivalent temperature difference is 10.5 mK, the percentage of defective elements is 0.12%, and the correction time is more than 3 h. The FPA has been compared to similar commercial devices based on bulk InSb.
Journal Title: Journal of Communications Technology and Electronics
Year Published: 2017
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