LAUSR

The nanoscale profiling modes of epitaxial GaAs layers are experimentally studied through focused ion beams (FIB). The regularities of the influence of ion current and single FIB exposure time on the geometric characteristics of the forming nanosized profile and the etching rate of the surface of GaAs epitaxial layers are determined. It is established that, within the range of FIB modes used, the rate of normal etching of GaAs(001) is on average an order of magnitude lower than the rate of lateral etching. It is shown that the FIB formation of structures with sizes of up to 100 nm atop the GaAs epitaxial layers necessitates the use of ion currents of up to 102 pA and single exposure times at a point from 10 to 100 μs. The results of the present work can be used in the development of technological processes for manufacturing promising elements of nanoelectronics and nanophotonics based on a combination of the FIB method and various types of growth methods.