LAUSR

The bulk fin field-effect transistor (FinFET) has been the primary semiconductor technology in nanotechnology. To protect low supply voltage circuits based on FinFET, trigger voltage [Formula: see text] of the silicon controlled rectifier (SCR) which acts as electrostatic discharge (ESD) protection device should be lowered further. In this paper, in order to lower the [Formula: see text] an extra implant technique is proposed to form bridging well low trigger voltage FinFET SCR (FinFET BRLVTSCR). The experiments demonstrate that the trigger voltage can be lowered effectively. Moreover, the TCAD simulations bring an in-depth physical understanding of ESD current conduction and failure mechanism during ESD protection. Finally, the turn-on characteristic demonstrates proposed novel SCRs are fast and effective under TLP and very fast TLP (VFTLP) stress.