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Gallium arsenide (GaAs) implanted with silicon forming intersubband of SiGaAs is a promising material for making novel electronic and optoelectronic devices. This paper is focused on finding optimu... Click to show full abstract
Gallium arsenide (GaAs) implanted with silicon forming intersubband of SiGaAs is a promising material for making novel electronic and optoelectronic devices. This paper is focused on finding optimu...
Keywords:
arsenide implanted;
implanted silicon;
intersubband absorption;
gallium arsenide;
absorption gallium
Journal Title: International Journal of Nanoscience
Year Published: 2019
Link to full text (if available)
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Journal Title: International Journal of Nanoscience
Year Published: 2019
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!