LAUSR

Antimony selenide is a promising semiconductor with great application potential in the fields of optoelectronic devices. In this work, the vapor transport deposition (VTD) method is employed to prepare Sb2Se3 films on substrates. The influence of deposition temperature, distance between the Sb2Se3 sources and substrate, and the deposition holding time on the film morphology is investigated in detail. The deposited Sb2Se3 thin film is employed to fabricate photodetector with a structure of ITO/SnO2/Sb2Se3/Au, where the spin-coated SnO2 film is used as the buffer layer. The device demonstrates relative high responsivity in the range of 300–1000[Formula: see text]nm with a maximum value of 312[Formula: see text]mA W[Formula: see text] at 750[Formula: see text]nm.