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We first review a procedure that, through the design of a basic current mirror, allows a comparison between carbon nanotube field-effect transistor (CNTFET) and metal oxide semiconductor (MOS) technology. For… Click to show full abstract
We first review a procedure that, through the design of a basic current mirror, allows a comparison between carbon nanotube field-effect transistor (CNTFET) and metal oxide semiconductor (MOS) technology. For every simulation parameters of merit, such as relative error in reference current replication and small-signal output resistance, are evaluated in order to show the differences between the two considered technologies. Then the analysis is carried out considering also the effects of noise. For reference current of 1 and 10 μA the output static and dynamic characteristics are better in the case of CNTFET, but for all cases the output noise current is always higher for the CNTFET than for the MOS. The software used is Advanced Design System which is compatible with the Verilog A programming language.
Journal Title: ECS Journal of Solid State Science and Technology
Year Published: 2022
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