LAUSR

PVA polymeric sheets were irradiated utilizing a homemade ion beam cold cathode source for use in optoelectronics applications. The PVA films were exposed to hydrogen beams with fluence range 8 x 1017 to 24 x 1017 ions.cm-2. The structural and functional group characteristics of pure and treated PVA films were investigated using X-ray diffraction and Fourier transform infrared spectroscopy methods, which confirmed the success fabrication of the PVA films. In frequency of 102 to 5x106 Hz, the conductivity, electrical impedance, and dielectric modulus of untreated and treated samples were determined. The dielectric characteristics of PVA films exhibit a significant modification when subjected to a hydrogen beam. Additionally, after being exposed to 16x1017 ions, the dielectric constant〖 ε〗^' improved from 0.0078 for un-irradiated PVA to 0.0395, and conductivity changed from 8.87 x 10-11 S/cm to 3.32 x 10-10 S/cm. Moreover, the relaxation time for PVA is reduced from 28.4 x 10-5 sec to 8.98 x 10-5 sec for 8 x 1017 ions.cm-2 and to 3.5 x 10-5 sec for 24 x 1017 ions.cm-2. The present study extends the potential use of the treated PVA films to a broader range of fields, including microelectronics