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In this review we present many designs for carbon nanotube field effect transistor (CNTFET)-based circuits, already proposed by us and here critically examined. For some of these, we compare the… Click to show full abstract
In this review we present many designs for carbon nanotube field effect transistor (CNTFET)-based circuits, already proposed by us and here critically examined. For some of these, we compare the performance of proposed circuits both in CNTFET and complementary metal oxide semiconductor technology. For the CNTFET model, we use a compact, semi-empirical model, while, for the metal oxide semiconductor field effect transistor model, we use the BSIM4 one of ADS library. Moreover in some design examples we compare our results with those obtained using the Stanford model. All simulations are carried out using the software advanced design system, which is compatible with the Verilog-A programming language.
Journal Title: ECS Journal of Solid State Science and Technology
Year Published: 2023
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