LAUSR

By employing a 355 nm nanosecond ultraviolet laser annealing, the impact of fluorine (F) co-doping on the formation of a highly activated N-type shallow junction in germanium (Ge) was investigated. Secondary ion mass spectrometry depth profiling of phosphorus (P) demonstrated that an ultra high P concentration of 9e20/cm3 at a shallow junction of 55 nm with less dopant diffusion can be obtained using ns laser annealing. F co-doping was confirmed to be an efficient way to improve the activation of the P dopants, but show less influence on the redistribution of P dopants within the NLA melted region. However, the activation level of the shallow junction could be increased to approximately 1e20/cm3 in the presence of F at an optimized concentration.