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Engineering the Side Facets of Vertical [100] Oriented InP Nanowires for Novel Radial Heterostructures

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In addition to being grown on industry-standard orientation, vertical [100] oriented nanowires present novel families of facets and related cross-sectional shapes. These nanowires are engineered to achieve a number of… Click to show full abstract

In addition to being grown on industry-standard orientation, vertical [100] oriented nanowires present novel families of facets and related cross-sectional shapes. These nanowires are engineered to achieve a number of facet combinations and cross-sectional shapes, by varying their growth parameters within ranges that facilitate vertical growth. In situ post-growth annealing technique is used to realise other combinations that are unattainable solely using growth parameters. Two examples of possible novel radial heterostructures grown on these vertical [100] oriented nanowire facets are presented, demonstrating their potential in future applications.

Keywords: 100 oriented; radial heterostructures; vertical 100; novel radial; growth; engineering side

Journal Title: Nanoscale Research Letters
Year Published: 2019

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