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Wide range detector of plasma induced charging effect for advanced CMOS BEOL processes

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This work proposed a modified plasma induced charging (PID) detector to widen the detection range, for monitoring the possible plasma damage across a wafer during advanced CMOS BEOL processes. New… Click to show full abstract

This work proposed a modified plasma induced charging (PID) detector to widen the detection range, for monitoring the possible plasma damage across a wafer during advanced CMOS BEOL processes. New antenna designs for plasma induced damage patterns with extended capacitors are investigated. By adapting the novel PID detectors, the maximum charging levels of the detectors have been enhanced.

Keywords: beol processes; plasma; plasma induced; advanced cmos; induced charging; cmos beol

Journal Title: Nanoscale Research Letters
Year Published: 2021

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