LAUSR

Threshold switching in chalcogenides has attracted considerable attention because of their potential application to high-density and three-dimensional stackable cross-point array structures. However, despite their excellent threshold switching characteristics, the selectivity and endurance characteristics of such selectors should be improved for practical application. In this study, the effect of Ag on the threshold switching behavior of a Ga 2 Te 3 selector was investigated in terms of selectivity and endurance. The Ag-Ga 2 Te 3 selector exhibited a high selectivity of 10 8 with low off-state current of < 100 fA, steep turn-on slope of 0.19 mV/dec, and high endurance of 10 9 cycles. The transient response was verified to depend on the pulse input voltage and measurement temperature. Considering its excellent threshold switching characteristics, the Ag-Ga 2 Te 3 selector is a promising candidate for applications in cross-point array structures.