LAUSR

Manganese sulphide (MnS) thin films were prepared by chemical bath deposition method. X-ray diffraction analysis was used to study the structure and the crystallite size of MnS thin films. The grain size and the surface morphology were studied using scanning electron microscopy. The optical properties were studied using the UVvisible absorption spectrum. The dielectric properties of MnS thin films were studied for different frequencies and different temperatures. Further, electronic properties, such as valence electron plasma energy, average energy gap or the Penn gap, the Fermi energy and electronic polarizability of the MnS thin films were calculated. The ac electrical conductivity study revealed that the conduction depended both on the frequency and the temperature. The temperature dependent conductivity study confirmed the semiconducting nature of the films.