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Mid-wave infrared optical receiver based on an InAsSb-nBn photodetector using the barrier doping engineering technique for low-power satellite optical wireless communication.

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This paper proposes a new nBn photodetector (nBn-PD) based on InAsSb with a barrier doping engineering technique [core-shell doped barrier (CSD-B) nBn-PD] for utilization as a low-power receiver in satellite… Click to show full abstract

This paper proposes a new nBn photodetector (nBn-PD) based on InAsSb with a barrier doping engineering technique [core-shell doped barrier (CSD-B) nBn-PD] for utilization as a low-power receiver in satellite optical wireless communication (Sat-OWC) systems. In the proposed structure, the absorber layer is selected from an I n A s 1-x S b x (x=0.17) ternary compound semiconductor. The difference between this structure and other nBn structures is the placement of the top and bottom contacts in the form of a PN junction, which increases the efficiency of the proposed device through the creation of a built-in electric field. Also, a barrier layer is placed from the AlSb binary compound. The presence of the CSD-B layer with the high conduction band offset and very low valence band offset improves the performance of the proposed device compared to conventional PN and avalanche photodiode detectors. By applying -0.1V bias at 125 K, the dark current is demonstrated at 4.31×10-5 A/c m 2 by assuming high-level traps and defect conditions. Examining the figure of merit parameters under back-side illumination with a 50% cutoff wavelength of 4.6 µm shows that at 150 K, the responsivity of the CSD-B nBn-PD device reaches about 1.8 A/W under 0.05W/c m 2 light intensity. Regarding the great importance of using low-noise receivers in Sat-OWC systems, the results indicate that the noise, noise equivalent power, and noise equivalent irradiance are calculated as 9.98×10-15 A H z -1/2, 9.21×10-15 W H z 1/2, and 1.02×10-9 W/c m 2, respectively, at -0.5V bias voltage and 4 µm laser illumination with the influence of shot-thermal noise. Also, D ∗ obtains 3.26×1011 c m H z 1/2/W without using the anti-reflection coating layer. In addition, since the bit error rate (BER) plays an essential role in the Sat-OWC systems, the effect of different modulations on the BER sensitivity of the proposed receiver is investigated. The results represent that the pulse position modulation and return zero on-off keying modulations create the lowest BER. Attenuation is also investigated as a factor that significantly affects BER sensitivity. The results clearly express that the proposed detector provides the knowledge to achieve a high-quality Sat-OWC system.

Keywords: nbn photodetector; barrier doping; doping engineering; based inassb; power; engineering technique

Journal Title: Applied optics
Year Published: 2023

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