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Top-illuminated PIN and modified uni-traveling carrier (MUTC) photodiodes based on InGaAs/InAlAs/InP were epitaxially grown on Si templates. Photodiodes with 30-μm diameter have dark currents as low as 10 nA at… Click to show full abstract
Top-illuminated PIN and modified uni-traveling carrier (MUTC) photodiodes based on InGaAs/InAlAs/InP were epitaxially grown on Si templates. Photodiodes with 30-μm diameter have dark currents as low as 10 nA at 3 V corresponding to a dark current density of only 0.8 mA/cm2. The responsivity, 3-dB bandwidth, output power and third-order output intercept point (OIP3) were 0.79 A/W, 9 GHz, 2.6 dBm and 15 dBm, respectively.
Keywords:
dark current;
photodiodes heteroepitaxy;
silicon photodiodes;
current iii;
low dark;
iii silicon
Journal Title: Optics express
Year Published: 2018
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Journal Title: Optics express
Year Published: 2018
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!