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Passive terahertz imaging detectors based on antenna-coupled high-electron-mobility transistors.

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Aiming at the requirement of passive terahertz imaging, we report a high-sensitivity terahertz detector based on an antenna-coupled AlGaN/GaN high-electron-mobility transistor (HEMT) at 77 K without using low-noise terahertz amplifier.… Click to show full abstract

Aiming at the requirement of passive terahertz imaging, we report a high-sensitivity terahertz detector based on an antenna-coupled AlGaN/GaN high-electron-mobility transistor (HEMT) at 77 K without using low-noise terahertz amplifier. The measured optical noise-equivalent power and the noise-equivalent temperature difference of the detector were about 0.3p W/H z and 370 mK in a 200 ms integration time over a bandwidth of 0.7 - 0.9 THz, respectively. By using this detector, we demonstrated passive terahertz imaging of room-temperature objects with signal-to-noise ratio up to 13 dB. Further improvement in the sensitivity may allow passive terahertz imaging using AlGaN/GaN-HEMT at room temperature.

Keywords: based antenna; terahertz imaging; high electron; passive terahertz; terahertz; antenna coupled

Journal Title: Optics express
Year Published: 2020

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