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We demonstrate foundry-fabricated O-band III-V-on-silicon discrete-mode lasers. The laser fabrication follows the back-side-on-buried-oxide laser integration process and is compatible with complex, multilayer, silicon-on-insulator based platforms. A series of devices were… Click to show full abstract
We demonstrate foundry-fabricated O-band III-V-on-silicon discrete-mode lasers. The laser fabrication follows the back-side-on-buried-oxide laser integration process and is compatible with complex, multilayer, silicon-on-insulator based platforms. A series of devices were characterized, with the best devices producing on-chip powers of nearly 20 mW with Lorentzian linewidths below 20 kHz and a side mode suppression ratio of at least 60 dB.
Keywords:
discrete mode;
band;
mode lasers;
silicon;
back side;
iii silicon
Journal Title: Optics express
Year Published: 2020
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Journal Title: Optics express
Year Published: 2020
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!