LAUSR

This paper investigated the optimization of InGaAs/GaAs metamorphic buffer and its application to LPCs (laser power converters). Firstly, InGaAs (18%) metamorphic buffer with step (S), step + overshoot (SO), step + reverse (SR), and step + reverse + overshoot (SRO) structures were investigated by X-ray, AFM and TEM, respectively. Moreover, an InGaAs (24%) SRO buffer structure with a relaxation of 94.5% and a surface roughness of 5.4 nm were obtained. Further, 1064 nm InGaAs metamorphic LPCs were grown and fabricated on InGaAs (24%) SRO buffer with an efficiency of 44.2%, and the reliability of these metamorphic LPCs was demonstrated by operating it at 190°C for 1174 hours.