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Selective reflection from an Rb layer with a thickness below λ/12 and applications.

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We have studied the peculiarities of selective reflection from an Rb vapor cell with a thickness L2  kG). Click to show full abstract

We have studied the peculiarities of selective reflection from an Rb vapor cell with a thickness L<70  nm, which is smaller than the length scale of evanescent fields λ/2π and more than an order of magnitude smaller than the optical wavelength. A 240 MHz redshift due to the atom-surface interaction is observed for a cell thickness of L=40  nm. In addition, complete frequency-resolved hyperfine Paschen-Back splitting of atomic transitions to four components for Rb87 and six components for Rb87 is recorded in a strong magnetic field (B>2  kG).

Keywords: thickness applications; layer thickness; reflection layer; reflection; selective reflection

Journal Title: Optics letters
Year Published: 2017

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