High-bandwidth GaN-based mini-LEDs on the c-sapphire substrate are promising candidates for underwater optical wireless communication (UOWC) systems due to their compatibility with the mature LED fabrication process. Here we fabricate… Click to show full abstract
High-bandwidth GaN-based mini-LEDs on the c-sapphire substrate are promising candidates for underwater optical wireless communication (UOWC) systems due to their compatibility with the mature LED fabrication process. Here we fabricate and characterize mini-LEDs based on a single-layer InGaN active region with a peak emission wavelength around 484 nm for high-speed UOWC links. Since the LED diameter affects the trade-off between the modulation bandwidth and the optical modulation amplitude, mini-LEDs with varying mesa diameters from 100 µm to 175 µm are fabricated for the measurement. The 150 µm mini-LED with a 3-dB optical bandwidth of 906 MHz performs the best and enables the transmission of a net 4 Gb/s PAM-4 signal over 2 m of underwater distance using only linear equalization. This UOWC system has achieved, to the best of our knowledge, the highest net data rate and the highest data-rate-distance product based on a single-pixel mini-LED.
               
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