LAUSR

The concentrations of N (CN) and interstitial metal defects (CMi) and the film thickness (d) dependent microstructure and optical and electrical properties of InGaZnON thin films deposited by RF sputtering are studied. The thin films have a C-axis aligned crystalline structure with increased grain size and CMi and CN with rising substrate temperature and power during sputtering. The average visible optical transmittance (Tr) of 80% decreases with the increased d. The lowered Tr in the infrared region with the increment of free carrier absorption is observed. The refractive index and extinction coefficient and dielectric constants increase, and band gap decreases from 2.8 to 2.2 eV, due to the increased CN and d. The electrical resistivity decreases from 0.1 to 5.0 E-3 Ω.cm and the work function increases from 2.8 to 3.7 eV with the increased free carrier concentration (Ne). The electrical properties are air-stable stored for 1000 hrs due to the N passiviated surface. The thermoelectric properties, including the Seebeck coefficient (S) and power factor and electric thermal conductivity from 300 to 673 K, are evaluated. The S and extracted electron effective mass are temperature and Ne depended. The electron mean path and scattering time and plasma energy at room temperature are calculated.