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Direct modulation characteristics of microdisk lasers with InGaAs/GaAs quantum well-dots

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GaAs-based microdisk lasers with an active region representing a dense array of indium-rich islands (InGaAs quantum well-dots) were studied using direct small-signal modulation. We demonstrate that using dense arrays of… Click to show full abstract

GaAs-based microdisk lasers with an active region representing a dense array of indium-rich islands (InGaAs quantum well-dots) were studied using direct small-signal modulation. We demonstrate that using dense arrays of InGaAs quantum well-dots enables uncooled high-frequency applications with a GHz-range bandwidth for microdisk lasers. A maximum 3 dB modulation frequency of 5.9 GHz was found in the microdisk with a radius of 13.5 μm operating without a heatsink for cooling. A modulation current efficiency factor of 1.5  GHz/mA1/2 was estimated.

Keywords: quantum well; well dots; microdisk lasers; modulation characteristics; direct modulation; modulation

Journal Title: Photonics Research
Year Published: 2019

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