Abstract In this study, polyvinylidene fluoride (PVDF) thick films with thickness ∼180 µm were synthesized by solution casting. X-ray diffraction study established the co-existence of both α and β-phases. Raman… Click to show full abstract
Abstract In this study, polyvinylidene fluoride (PVDF) thick films with thickness ∼180 µm were synthesized by solution casting. X-ray diffraction study established the co-existence of both α and β-phases. Raman spectroscopy of the synthesized PVDF thick films corroborated the existence of α and β-phases in 0.71:1 ratio. Surface micrographs of PVDF thick films showed dense microstructure with grain size ∼10 µm. Additionally, the room temperature values of dielectric constant and dielectric loss at 100 kHz were measured to be ∼20 and 0.33, respectively. Furthermore, ferroelectric behavior of PVDF thick films was confirmed by the polarization versus electric field (P–E) hysteresis loop study. A leakage current density of 1.55 × 10−5 A cm−2 at an applied electric field of 500 kV cm−1 was obtained in PVDF thick films.
               
Click one of the above tabs to view related content.