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The electrochemical catalytic effects of the NiO islands and layer on n-type GaN were investigated. The NiO islands covered some parts of the GaN surface and were seen to improve… Click to show full abstract
The electrochemical catalytic effects of the NiO islands and layer on n-type GaN were investigated. The NiO islands covered some parts of the GaN surface and were seen to improve photoanodic current and prevent photoanodic corrosion. However, the NiO layer was found to worsen the photoanodic current. Hole transportation is thought to occur from the GaN valence band edge to the NiO valence band edge in their surface plane direction due to the band alignment. In addition, the electron capture for water oxidation is expected to be the valence band edge of the NiO instead of the intermediate state.
Journal Title: MRS Communications
Year Published: 2018
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