LAUSR

An area-selective atomic layer deposition (AS-ALD) process is developed that achieves increased selectivity by combining two strategies: i) selective enhancement using a small molecule activator and ii) self-assembled monolayer (SAM)-based inhibition. Specifically, we show that Pt can be selectively deposited on SiO2 over Co. In this process, Co, which serves as the non-growth surface, is protected by an octadecylphosphonic acid (ODPA) SAM, while the subsequent nucleation and growth of Pt on SiO2 is enhanced using a trimethylaluminum (AlMe3) pretreatment. This combination of enhancement and inhibition yields 3–6 times  higher Pt coverage on the growth surface (SiO2) while maintaining selectivity of at least 0.98 after 100 Pt ALD cycles. Pt is used here as a model system, but this process can be extended for AS-ALD of other materials.