LAUSR

B-III-nitrides possess the potential to bring a revolution in the future power electronic and optoelectronic industry due to their unique properties including higher bandgap and wide lattice parameter ranges. Despite significant efforts for achieving single-phase B-III-N films with high B% over large thickness for device applications, the desired film is yet to achieve because of the crystallinity degradations and stoichiometry deviations at high B% and large thicknesses. It is crucial to understand what are the major factors playing roles in crystallinity degradations and stoichiometric deviance. The purpose of this review is to combine the development towards the growth of B-III-N alloys and provide insight into what is happening in the microstructures of the B-III-N films demonstrated by local microstructural and nanoscale chemical analyses reported so far. The information summarized here will be beneficial for the material synthesis and device community to grow high-quality B-III-N films for designing future high-performance devices.