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UV Total Dose Nonvolatile Sensor Using Silicon–Oxide–Nitride–Oxide–Silicon Capacitor with Oxy-nitride as Charge-trapping Layer

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1Electronic Engineering Department, Southern Taiwan University of Science and Technology, 1, Nan-Tai Street, Yungkang District, Tainan 710, Taiwan 2Department of Opto-Electronic System Engineering, Minghsin University of Science and Technology, Xinxing… Click to show full abstract

1Electronic Engineering Department, Southern Taiwan University of Science and Technology, 1, Nan-Tai Street, Yungkang District, Tainan 710, Taiwan 2Department of Opto-Electronic System Engineering, Minghsin University of Science and Technology, Xinxing Road 1, Xinfeng 30401, Taiwan 3Treasure Giant Technology Inc. 3F-1, 42, Lyushuei Road, Hsinchu City 30068, Taiwan 4National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu Science Park, Hsinchu 30078, Taiwan

Keywords: using silicon; sensor using; nonvolatile sensor; silicon oxide; total dose; dose nonvolatile

Journal Title: Sensors and Materials
Year Published: 2018

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