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Degradation processes in a memristor based on germanium selenide with a self-forming conductive channel

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The effect of temperature on degradation processes in an Ag/SnSe/Ge2Se3/W ionic memristor with a self-forming conductive channel in the temperature range of 22-65oC at a switching frequency of 100 Hz… Click to show full abstract

The effect of temperature on degradation processes in an Ag/SnSe/Ge2Se3/W ionic memristor with a self-forming conductive channel in the temperature range of 22-65oC at a switching frequency of 100 Hz was studied based on determining the electrical conductivity of the memristor in low-resistance and high-resistance modes of operation. It has been established that at elevated temperatures, degradation processes occur faster and affect both the low-resistance and high-resistance modes of operation of the memristor. The degradation activation energy was determined to be 1.16 eV. Keywords: electrical conductivity, solid electrolyte, degradation, conductive channel.

Keywords: self forming; degradation processes; memristor; conductive channel; degradation

Journal Title: Technical Physics Letters
Year Published: 2023

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